ALISO VIEJO, Calif.,
May 29, 2018 /PRNewswire/ --
Microsemi Corporation (Nasdaq: MSCC), a leading provider of
semiconductor solutions differentiated by power, security,
reliability and performance, today announced its extremely low
inductance package dedicated to high current, low specific
on-resistance (RDSon) Silicon Carbide (SiC) MOSFET power modules.
The new package, developed specifically for the company's SP6LI
product family, is designed to offer 2.9 nanohenry (nH) stray
inductance suitable for SiC MOSFET technology and enable high
current, high switching frequency as well as high efficiency. The
SP6LI power modules in the new packaging, along with other SiC
power modules from Microsemi's existing product family, will be
showcased June 5-7 in hall 6, booth
318 at PCIM Europe 2018, held at the Exhibition Centre in
Nuremberg, Germany.
As Microsemi continues to expand its SiC solutions, it has
become one of the few suppliers providing a range of Si/SiC power
discrete and module solutions to the market. With one of the lowest
stray inductance packages in the industry dedicated to high current
SiC MOSFET power modules, Microsemi's SP6LI product family features
five standard modules, offering phase leg topology ranking from
1200 volts (V), 210 amperes (A) to 586 A at a case temperature (Tc)
of 80 degrees Celsius to 1700 V, 207 A at Tc of 80 degrees Celsius.
Offering higher power density and a compact form factor, the new
package enables lower quantity of modules in parallel to achieve
complete systems, helping customers to further downsize their
equipment.
Microsemi's SP6LI power modules can be used in switch mode power
supplies and motor control in a variety of industrial, automotive,
medical, aerospace and defense applications. Examples include
electric vehicle/hybrid electric vehicle (EV/HEV) powertrain and
kinetic energy recovery systems (KERSs); aircraft actuation
systems; power generation systems; switched mode power supplies for
applications including induction heating, medical power supplies
and electrification of trains; photovoltaic (PV)/solar/wind
converters and uninterrupted power supply (UPS).
"Our extremely low stray inductance standard SP6LI package is
ideal for improving the performance of SiC MOSFETs for high
switching, high current and high efficiency applications, offering
a smaller sized power systems solution which can help customers
significantly reduce their equipment needs," said Leon Gross, vice president and business unit
manager for Microsemi's Discrete and Power Management business
unit. "These superior switching characteristics of our low
inductance package enable customers to develop higher performance
and highly reliable systems to help differentiate them from the
competition."
According to market research firm Technavio, the global SiC
market for semiconductor applications is expected to reach nearly
$540.5 million by 2021, growing at a
compound annual growth rate (CAGR) of more than 18 percent. In
addition, IHS Markit's research indicates by 2025 SiC MOSFETs are
forecast to generate revenue exceeding $300
million, almost reaching the levels of Schottky diodes to
become the second best-selling SiC discrete power device type.
The SP6LI power modules from Microsemi feature a phase leg
topology made of SiC power MOSFETs and SiC Schottky diodes, and
offer an extremely low RDSon down to 2.1 mOhms per switch and an
internal thermistor for temperature monitoring. They also offer
screw-on terminals for both signal and power connections, as well
as isolated and high thermal conductivity substrates (Aluminum
Nitrate as a standard and Silicon Nitride as an option) for
improved thermal performance. In addition, the standard copper base
plate can be replaced as an option with Aluminum Silicon Carbide
(AlSiC) material enabling higher power cycling
capabilities.
Other key features include:
- Optimized layout for multi-SiC MOSFET and diode chips assembly
in phase leg topology;
- Symmetrical design to accept up to 12 SiC MOSFET chips in
parallel per switch;
- Each die in parallel with its own gate series resistor for
homogenous current balancing;
- High current capability up to 600 A at very fast switching
frequency; and
- Optional mix of assembly materials to better address different
markets and applications.
Demonstrations at PCIM June 5-7
in Hall 6, Booth 318
Microsemi's product experts will be at
the company's booth at PCIM during show hours to showcase its
next-generation SiC solutions, including its new low inductance
SiC-based SP6LI power module. In addition, the company's recently
announced next-generation 1200 V, 40 mOhm SiC MOSFET device and
1200V, 10/30/50A SiC diode product will be showcased along with a
power factor correction (PFC) reference design. For more
information or to request a meeting at the show, visit
https://www.microsemi.com/details/346-pcim-europe.
Product Availability
The SP6LI product family is
sampling now with the low inductance package. For more information,
visit
https://www.microsemi.com/product-directory/silicon-carbide-sic/4995-sic-power-modules
or contact sales.support@microsemi.com.
About Microsemi
Microsemi Corporation (Nasdaq: MSCC)
offers a comprehensive portfolio of semiconductor and system
solutions for aerospace & defense, communications, data center
and industrial markets. Products include high-performance and
radiation-hardened analog mixed-signal integrated circuits, FPGAs,
SoCs and ASICs; power management products; timing and
synchronization devices and precise time solutions, setting the
world's standard for time; voice processing devices; RF solutions;
discrete components; enterprise storage and communication
solutions, security technologies and scalable anti-tamper products;
Ethernet solutions; Power-over-Ethernet ICs and midspans; as well
as custom design capabilities and services. Microsemi is
headquartered in Aliso Viejo,
California, and has approximately 4,800 employees globally.
Learn more at www.microsemi.com.
Microsemi and the Microsemi logo are registered trademarks or
service marks of Microsemi Corporation and/or its affiliates.
Third-party trademarks and service marks mentioned herein are the
property of their respective owners.
"Safe Harbor" Statement under the Private Securities Litigation
Reform Act of 1995: Any statements set forth in this news release
that are not entirely historical and factual in nature, including
without limitation statements related to its extremely low
inductance package dedicated to high current, low specific
on-resistance (RDSon) Silicon Carbide (SiC) MOSFET power modules,
and its potential effects on future business, are forward-looking
statements. These forward-looking statements are based on our
current expectations and are inherently subject to risks and
uncertainties that could cause actual results to differ materially
from those expressed in the forward-looking statements. The
potential risks and uncertainties include, but are not limited to,
such factors as rapidly changing technology and product
obsolescence, potential cost increases, variations in customer
order preferences, weakness or competitive pricing environment of
the marketplace, uncertain demand for and acceptance of the
company's products, adverse circumstances in any of our end
markets, results of in-process or planned development or marketing
and promotional campaigns, difficulties foreseeing future demand,
potential non-realization of expected orders or non-realization of
backlog, product returns, product liability, and other potential
unexpected business and economic conditions or adverse changes in
current or expected industry conditions, difficulties and costs in
implementing the company's acquisitions and divestitures strategy
or integrating acquired companies, uncertainty as to the future
profitability of acquired businesses and realization of accretion
from acquisition transactions, difficulties and costs of protecting
patents and other proprietary rights, inventory obsolescence and
difficulties regarding customer qualification of products. In
addition to these factors and any other factors mentioned elsewhere
in this news release, the reader should refer as well to the
factors, uncertainties or risks identified in the company's most
recent Form 10-K and all subsequent Form 10-Q reports filed by
Microsemi with the SEC. Additional risk factors may be identified
from time to time in Microsemi's future filings. The
forward-looking statements included in this release speak only as
of the date hereof, and Microsemi does not undertake any obligation
to update these forward-looking statements to reflect subsequent
events or circumstances.
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