SEOUL,
South Korea, July 10,
2023 /PRNewswire/ -- Magnachip Semiconductor
Corporation ("Magnachip" or "Company") (NYSE: MX) announced today
that the Company has released four new MXT LV
Metal-Oxide-Semiconductor Field-Effect Transistors
(MOSFETs)*, using Super-Short Channel technology, to
further expand Magnachip's seventh-generation MXT LV MOSFET line-up
for battery protection circuits of mobile devices.
Super-Short Channel is Magnachip's latest design technology to
reduce Ron (the resistance of MOSFETs during on-state
operation) by shortening the channel length between the source and
the drain. The Ron of these new MOSFETs has been
reduced by 24~40%, compared to previous generations, and as a
result, the battery performance is improved with low power losses
when a battery is charging or discharging.
In addition, Magnachip provides customized design service for
these products, based on the application specifications and battery
capacities, so the sizes of the MOSFETs can be reduced by 5 to 20%
respectively.
With these technical capabilities, flexible design and compact
size options, the extended MXT LV MOSFET line-up satisfies the
various technical requirements of a wide range of mobile devices,
from premium foldable phones to wireless earphones.
"Magnachip has released five new MXT LV MOSFETs for battery
protection circuits so far this year," said YJ Kim, CEO of
Magnachip. "We will continue to create premium MOSFETs that
offer great power efficiency and outstanding performance for mobile
devices to solidify our presence in the market."
* MXT LV MOSFET (Magnachip eXtreme Trench Low Voltage MOSFET):
Magnachip's cutting-edge product portfolio of 12~40V trench
MOSFETs
Product features
- 7th–generation silicon trench technology
- Reduced Ron by approximately 24%~40% compared to the
previous generations
- Enhanced switching speed through low total gate charge
- Outstanding thermal properties
- Solutions for a wide range of mobile devices
Family of 7th-generation MXT LV
MOSFETs
Product
|
VDS
|
RDS(on)1
|
RSS(on)2
|
Package
|
MDWC12D028ERH
|
12V
|
|
2.8mΩ
|
WLCSP
|
MDWC12D044E
|
12V
|
-
|
4.4mΩ
|
WLCSP
|
MDWC22D020E
|
22V
|
-
|
2.0mΩ
|
WLCSP
|
MDW24D048E
|
24V
|
4.8mΩ
|
-
|
Wafer
|
MDW24D150E
|
24V
|
15.0mΩ
|
-
|
Wafer
|
1 RDS(on): the resistance between the
drain and the source of MOSFETs during on-state operation
2 RSS(on): the resistance between the
source terminals of MOSFETs connected in series during on-state
operation
About Magnachip Semiconductor
Magnachip is a designer
and manufacturer of analog and mixed-signal semiconductor platform
solutions for communications, IoT, consumer, computing, industrial
and automotive applications. The Company provides a broad range of
standard products to customers worldwide. Magnachip, with more
than 40 years of operating history, owns a portfolio of
approximately 1,100 registered patents and pending applications,
and has extensive engineering, design and manufacturing process
expertise. For more information, please
visit www.magnachip.com. Information on or accessible through
Magnachip's website is not a part of, and is not incorporated into,
this release.
CONTACTS:
|
|
|
United States (Investor
Relations):
Yujia Zhai
The Blueshirt
Group
Tel.
+1-860-214-0809
Investor.relations@magnachip.com
|
USA media / industry
analysts:
Mike Newsom
LouVan Communications,
Inc.
Tel.
+1-617-803-5385
mike.newsom@louvanpr.com
|
Korea / Asia
media:
Min A KIM
Senior manager of
Public Relations
Tel.
+82-2-6903-3211
mina3.kim@magnachip.com
|
View original content to download
multimedia:https://www.prnewswire.com/news-releases/magnachip-expands-its-7th-generation-mxt-lv-mosfet-line-up-for-battery-protection-circuits-of-mobile-devices-301871691.html
SOURCE Magnachip Semiconductor Corporation